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SEMICONDUCTOR
TECHNICAL DATA
High frequency rectification (Switching regulators, converters, choppers)
E M B
KDR105
SCHOTTKY BARRIER TYPE DIODE
M D 3
FEATURES
A
Low Forward Voltage : VF max=0.55V. Low Leakage Current : IR max=10 A.
2
J
1
C
CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-repetitive Peak Surge Current Junction Temperature Storage Temperature
SYMBOL VRRM VR IO IFSM Tj Tstg
RATING 50 50 0.1 2 125 -55 125
UNIT V V A A
L
MAXIMUM RATING (Ta=25
)
H N K N
DIM A B C D E G H J K L M N
MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN
G
3
1. NC 2. ANODE 3. CATHODE
2 1
USM
Marking
DL
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Voltage Forward Voltage Reverse Current Total Capacitance VR VF IR CT
)
TEST CONDITION IR=50 A IF=0.1A VR=25V VR=10V, f=1MHz MIN. 50 TYP. 7.7 MAX. 0.55 10 UNIT V V A pF
SYMBOL
2003. 2. 25
Revision No : 2
1/2
KDR105
I F - VF
10 FORWARD CURRENT I F (uA) REVERSE CURRENT I R (nA) 10 10 10 10
5 3
I R - VR
4
3
2
10
2
10 1 0.1 0 100 200 300 400 500 600
10
0
10
20
30
40
50
FORWARD VOLTAGE V F (mV)
REVERSE VOLTAGE VR (V)
VR - C
10
2
CAPACITANCE C (pF)
10
1
0
10
20
30
40
REVERSE VOLTAGE V R (V)
2003. 2. 25
Revision No : 2
2/2

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